3VD156600YL 3VD156600YL high voltage mosfet chips description ? 3VD156600YL is a high voltage n-channel enhancement mode power mos-fet chip fabricated in advanced silicon epitaxial planar technology. ? advanced termination scheme to provide enhanced voltage-blocking capability. ? avalanche energy specified. ? source-to-drain diode recovery time comparable to a discrete fast recovery diode ? the chips may packaged in to-92dt-3l type and the typical equivalent product is 1n60ss. ? the packaged product is widely used in ac-dc power suppliers, dc-dc converters and h-bridge pwm motor drivers. ? die size: 1.6mm*1.54mm. ? chip thickness: 30020 m. ? top metal: al, ba ckside metal : ag. chip topography absolute maximum ratings (t amb =25 c) parameter symbol ratings uni t drain-source voltage v ds 600 v gate-source v oltage v gs 30 v drain current i d 500 ma operation junction temperatu re t j 150 c storage temperature t stg -55-150 c electrical characteristics (t =25 c) amb parameter symbol test conditions min. typ. m ax. unit drain-source breakdown voltage v (br)dss v gs = 0v, i d =250 a 600 --- ---- v gate-threshold volta ge v th(gs) i d =250 a ,v ds =v gs 2.0 --- 4.0 v gate-body leakage l gss v gs =30v, v ds =0v --- --- 100 na zero gate voltage drain curre nt i dss v ds =600v, v gs =0v --- --- 1.0 a drain-source on-resistance r s(on) i d =0.5a, v gs =10v --- --- 13.5 d source-d rain diode forward on voltage v fsd i d =0.8a,v gs =0v --- --- 1.0 v hangzhou silan microelectronics co.,ltd rev:1.0 2008.10.15 http: www.silan.com.cn page 1 of 1
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